SUR2X30-12_16 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes

SUR2x30-12
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
70
A
60
50
I_F
40
30
T_VJ=25°C
T_VJ=100°C
T_VJ=150°C
20
10
0
0
1
2
3V 4
V_F
Fig. 1 Forward current
versus voltage drop.
6
µC
T_VJ=100°C
V_R= 540V
5
4
Q_r
3
I_F=30A
I_F=60A
I_F=30A
I_F=15A
2
max.
1
typ.
50
A
T_VJ=100°C
V_R= 540V
40
I_RM
30
I_F=30A
I_F=60A
I_F=30A
I_F=15A
20
10
max.
typ.
0
1
10
100 A/µs 1000
-di_F/dt
Fig. 2 Recovery charge versus -di_F/dt.
0
0
200
400 A/µs 600
-di_F/dt
Fig. 3 Peak reverse current versus
-di_F/dt.
1.4
1.2
1.0
K_f
I_RM
0.8
0.6
Q_R
0.4
0.2
0.0
0
40
80
T_J
120 °C 160
Fig. 4 Dynamic parameters versus
junction temperature.
1.0
µs
0.8
t_{rr 0.6}
0.4
max.
T_VJ=100°C
V_R=540V
I_F=30A
I_F=60A
I_F=30A
I_F=15A
0.2
typ.
0.0
0
200
400 A/µs 600
-di_F/dt
Fig. 5 Recovery time versus -di_F/dt.
60
V
50
V_FR
40
V_FR
30
1200
ns
1000
800
t_fr
600
20
400
10
0
0
t_fr
200
di_F/dt
T_VJ=125°C ²⁰⁰
I_F=30A
0
400 A/µs 600
Fig. 6 Peak forward voltage
versus di_F/dt.
Fig. 7 Transient thermal impedance junction to case.
P3
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