SUR2X100-06 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR2x100-06
Ultra Fast Recovery Epitaxial Diodes
150
A
125
I_{F 100}
75
T_VJ=150°C
50
T =100°C
VJ
25
T_VJ=25°C
0
0.0
0.5
1.0 V 1.5
V_F
Fig. 1 Forward current I_F versus V_F
7
C ^{TVJ= 100°C}
6 ^{VR = 300V}
Q_{r 5}
4
3
I_F=200A
I_F=100A
I_F= 50A
2
1
0
100
A/us 1000
-di_F/dt
Fig. 2 Reverse recovery charge Q_r
versus -di /dt
F
80
A ^{TVJ= 100°C}
70 ^VR ^{= 300V}
I_{RM 60}
50
I_F=200A
40 ^I_F^=100A
I_F= 50A
30
20
10
0
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 3 Peak reverse current I_RM
versus -di /dt
F
1.4
1.2
K_f
1.0
0.8
0.6
Q_r
I_RM
260
ns
240
t_{rr 220}
200
180
160
140
T_VJ= 100°C
V_R = 300V
I_F=200A
I_F=100A
I_F= 50A
60
V
50
V_FR
40
t_fr
30
20
10
3.0
T_VJ= 100°C
I_F = 100A ^us
2.5
t_fr
2.0
V_FR
1.5
1.0
0.5
0.4
0
50
100 °C 150
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus T
VJ
120
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 5 Recovery time t_rr versus -di_F/dt
0
0.0
0 200 400 600 800 1A0/0u0s
di_F/dt
Fig. 6 Peak forward voltage V_FR and t_fr
versus di /dt
F
1
K/W
D=0.7
Z_thJC
0.5
0.3
0.2
0.1
0.1 _0.05
Single Pulse
Constants for Z_thJC calculation:
i
R_thi (K/W)
t_i (s)
1
0.02
2
0.05
3
0.076
4
0.24
5
0.114
0.00002
0.00081
0.01
0.94
0.45
0.05
0.001
0.01
0.1
1s
10
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles