SUR12060_16 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes

SUR12060
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
150
A
125
I_{F 100}
75
50
T _VJ=150°C
T _VJ=100°C
25
T _VJ=25°C
0
0.0
0.5
1.0 V 1.5
V_F
F ig. 1 F orward current I_F vers us V _F
7
C ^{TVJ= 100°C}
6 ^{VR = 300V}
Q_{r 5}
4
I_F =1 4 0 A
I_F= 70A
I_F= 35A
3
2
1
0
100
A/ s 1000
-di_F /dt
F ig. 2 R evers e recovery charge Q_r
vers us -di_F/dt
80
A ^TVJ^{= 100°C}
70 ^VR ^{= 300V}
I_{RM 60}
50
40
I_F =1 4 0 A
I_F= 70A
I_F= 35A
30
20
10
0
0 200 400 600 A8/00s 1000
-di_F /dt
F ig. 3 P eak revers e current I_{R M}
vers us -di_F/dt
1.4
1.2
K_f
1.0
Q_r
0.8
I_{R M}
0.6
0.4
0
50
100 °C 150
T_VJ
F ig. 4 Dynamic parameters Q_r, I_{R M}
vers us T _VJ
240
ns
220
t_rr
200
180
160
T_VJ= 100°C
V_R = 300V
I_F=140A
I_F= 70A
I_F= 35A
140
0 200 400 600 A8/00s 1000
-di_F /dt
F ig. 5 R ecovery time t_rr vers us -di_F/dt
60
V
50
V_FR
40
t_fr
30
3.0
T_VJ= 100°C
I_F = 100A ^s
2.5
t_fr
2.0
V_FR
1.5
20
1.0
10
0.5
0
0.0
0 200 400 600 800 1A0/00s
di_F/dt
F ig. 6 P eak forward voltage V _FR and t_fr
vers us di_F/dt
1
K /W
D=0.7
0.5
Z _{thJ C}
0.3
0.1 ^0.2
0.01
0.05
S ingle P ulse
0.01
0.001
0.01
0.1
DS E I 120-06
1s
10
t
F ig. 7 T ransient thermal resistance junction to case at various duty cycles
P3
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