STD181GKXX Datasheet, PDF (3/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules

STD181GKXX
Thyristor-Diode Modules
Fig. 1 Surge overload current
I_TSM, I_FSM: Crest value, t: duration
Fig. 2 i²t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on- state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT181
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
P3
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