STD130 Datasheet, PDF (3/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules, Diode-Thyristor Modules

STD/SDT130
Thyristor-Diode Modules, Diode-Thyristor Modules
4000
I_TSM
A
3000
2000
1000
50 Hz
80 % V_RRM
T_VJ = 45°C
T_VJ = 125°C
10⁶
i²t
A²s
10⁵
T_VJ = 45°C
T_VJ = 125°C
0
0.001
0.01
0.1
s
1
t
Fig. 1 Surge overload current
I_TSM, I_FSM: Crest value, t: duration
10⁴
1
1
ms 0
t
Fig. 2 i²t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT130
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time