MUR20100_16 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes

MUR20100, MUR20120
Ultra Fast Recovery Diodes
70
A
60
50
I_{F 40}
30
T_VJ= 25°C
T_VJ=100°C
T_VJ=150°C
20
10
0
0
1
2
3V 4
V_F
Fig. 1 Forward current
versus voltage drop.
6
uC
T_VJ=100°C
V_R= 540V
5
4
Q_r
3
I_F=30A
I_F=60A
I_F=30A
I_F=15A
50
A
T_VJ=100°C
V_R= 540V
40
I_RM
30
I_F=30A
I_F=60A
I_F=30A
I_F=15A
max.
2
max.
20
typ.
1
10
typ.
0
1
10
100 A/us 1000
-di_F/dt
Fig. 2 Recovery charge versus -di_F/dt.
0
0
200
400 A/us 600
-di_F/dt
Fig. 3 Peak reverse current versus
-di_F/dt.
1.4
1.2
1.0
K_f
I_RM
0.8
0.6
Q_R
0.4
0.2
0.0
0
40
80
T_VJ
120 °C 160
Fig. 4 Dynamic parameters versus
junction temperature.
1ˇ.s0
0.9
0.8
t_rr ^0.7
0.6
0.5
max.
T_VJ=100°C
V_R=540V
I_F=30A
I_F=60A
I_F=30A
I_F=15A
0.4
0.3
typ.
0.2
0.1
0
200
400 ^A/us 600
-di_F/dt
Fig. 5 Recovery time versus -di_F/dt.
60
V
50
V_FR
40
V_FR
30
1200
ns
1000
800
t_fr
600
20
400
t_fr
10
200
T_VJ=125°C
0
I_F=30A
0
0
200
400 A/us 600
-di_F/dt
Fig. 6 Peak forward voltage
versus di_F/dt.
Fig. 7 Transient thermal impedance junction to case.
P3
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