English
Language : 

MUR1630PT Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes
◁
40
A
IF 30
20
TVJ=150°C
TVJ=100°C
TVJ= 25°C
10
MUR1630PT
Ultra Fast Recovery Diodes
2000
TVJ= 100°C
nC VR = 300V
1500
Qr
1000
500
IF= 30A
IF= 15A
IF= 7.5A
40
TVJ= 100°C
A VR = 300V
30
IRM
20
IF= 30A
IF= 15A
IF= 7.5A
10
0
0
1
2V
VF
Fig. 1 Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
0
100
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
120
ns
110
trr
100
90
TVJ= 100°C
VR = 300V
IF= 30A
IF= 15A
IF= 7.5A
80
0
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
20
TVJ= 100°C
V IF = 15A
VFR
15
1.6
VFR
ıs
tfr
1.2
tfr
10
0.8
5
0.4
0.0
0
40
80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
10
K/W
1
ZthJC
0.1
70
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0
0.0
0 200 400 600 A80/u0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.908
2
0.35
3
0.342
0.0052
0.0003
0.017
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
s
1
t
P3
©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com