MUR120120_16 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes

MUR120120
Ultra Fast Recovery Diodes
150
A
125
I_{F 100}
75
50
25
T_VJ=150°C
T_VJ=100°C
T_VJ= 25°C
0
0.0 0.5 1.0 1.5 V 2.0
V_F
Fig. 1 Forward current I_F versus V_F
1.4
1.2
K_f
1.0
0.8
0.6
I_RM
Q_r
16
uC
14
T_VJ= 100°C
V_R = 600V
Q_{r 12}
10
8
I_F=140A
I_F= 70A
I_F= 35A
6
4
2
0
100
A/us 1000
-di_F/dt
Fig. 2 Reverse recovery charge Q_r
versus -di_F/dt
500
ns
450
t_rr
400
T_VJ= 100°C
V_R = 600V
350
I_F=140A
I_F= 70A
300
I_F= 35A
250
120
A
100
I_RM
T_VJ= 100°C
V_R = 600V
80
I_F=140A
I_F= 70A
60
I_F= 35A
40
20
0
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 3 Peak reverse current I_RM
versus -di_F/dt
60
V
50
V_FR
40
30
T_VJ= 100°C
I_F = 100A
t_fr
V_FR
1.5
us
t_fr
1.0
20
0.5
10
0.4
0
40
80 120 °C 160
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus T_VJ
1
K/W
D=0.7
0.5
Z_thJC
0.3
0.1 ^0.2
0.01
0.05
Single Pulse
200
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 5 Recovery time t_rr versus -di_F/dt
0
0.0
0 200 400 600 800 1A0/0u0s
di_F/dt
Fig. 6 Peak forward voltage V_FR and t_fr
versus di_F/dt
Constants for Z_thJC calculation:
i
R_thi (K/W)
t_i (s)
1
0.017
0.00038
2
0.0184
0.0026
3
0.1296
0.0387
4
0.185
0.274
0.01
0.001
0.01
0.1
1s
10
t
Fig. 7 Transient thermal resistance junction to case
P3
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