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HUR3040_16 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes
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HUR3040
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
70
A
60
IF 50
40
30
TVJ=150°C
TVJ=100°C
TVJ= 25°C
20
10
0
0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 1 Forward current IF versus VF
2.0
1.5
Kf
1.0
IRM
0.5
Qr
1600
nC
TVJ= 100°C
VR = 200V
1200
Qr
800
IF= 60A
IF= 30A
IF= 15A
400
0
100
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
90
ns
trr 80
70
TVJ= 100°C
VR = 200V
IF= 60A
IF= 30A
IF= 15A
60
50
A
IRM 40
TVJ= 100°C
VR = 200V
30 IF= 60A
IF= 30A
20 IF= 15A
10
0
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
15
V
VFR
tfr
10
TVJ= 100°C
IF = 30A
0.6
ıus
tfr
0.4
VFR
5
0.2
0.0
0
40
80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
1
K/W
50
0 200 400 600 A8/0u0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0.1
ZthJC
0
0.0
0 200 400 600 A80/u0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.465
2
0.179
3
0.256
0.0052
0.0003
0.0396
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
0.1
s
1
t
P3
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