HUR2X30-30_16 Datasheet, PDF (3/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour High-Performance Ultra Fast Recovery Epitaxial Diodes

HUR2x30-30
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
60
A
I_{F 40}
20
T_VJ=150°C
T_VJ=100°C
T_VJ= 25°C
800
T_VJ = 100°C
nC _{VR = 150V}
600
Q_r
400
I_F = 60A
I_{F = 30A}
I_{F = 15A}
200
30
A
25
T_VJ = 100°C
V_R = 150V
I_RM
20
15
I_F = 60A
I_{F = 30A}
I_{F = 15A}
10
5
0
0.0
0.5
1.0 V 1.5
V_F
Fig. 1 Forward current I_F versus V_F
1.4
1.2
K_f
1.0
0.8
0.6
I_RM
Q_r
0
100
A/us 1000
-di_F/dt
Fig. 2 Reverse recovery charge Q_r
versus -di_F/dt
90
ns
80
t_rr
T_VJ = 100°C
V_R = 150V
70
I_F = 60A
60
I_{F = 30A}
I_{F = 15A}
50
0
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 3 Peak reverse current I_RM
versus -di_F/dt
14
V
V_FR
t_fr
12
1.2
T_VJ = 100°C
I_F = 30A
uı s
1.0
t_fr
0.8
V_FR
0.6
10
0.4
0.2
0.4
0
40
80 120 °C 160
T_VJ
Fig. 4 Dynamic parameters Q_r, I_RM
versus T_VJ
10
K/W
1
Z_thJC
0.1
40
0 200 400 600 A8/0u0s 1000
-di_F/dt
Fig. 5 Recovery time t_rr versus -di_F/dt
0.01
8
0.0
0 200 400 600 A80/u0s 1000
di_F/dt
Fig. 6 Peak forward voltage V_FR and t_fr
versus di_F/dt
Constants for Z_thJC calculation:
i
R_thi (K/W)
t_i (s)
1
0.436
2
0.482
3
0.117
4
0.115
0.0055
0.009
0.0007
0.042
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
Fig. 7 Transient thermal resistance junction to case
1s
10
t
P3
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