STD40GXXS Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules

STD40GXXS
Thyristor-Diode Modules
Symbol
Test Conditions
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VT, VF IT, IF=80A; TVJ=25^oC
VTO For power-loss calculations only (TVJ=125^oC)
rT
VGT
VD=6V;
IGT
VD=6V;
TVJ=25^oC
TVJ=-40^oC
TVJ=25^oC
TVJ=-40^oC
VGD TVJ=TVJM;
VD=2/3VDRM
IGD
IL
TVJ=25^oC; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
IH
TVJ=25^oC; VD=6V; RGK=
tgd
TVJ=25^oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
tq
TVJ=TVJM; IT=120A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS TVJ=TVJM; IT, IF=50A; -di/dt=0.64A/us
IRM
RthJC per thyristor/diode; DC current
RthJK
dS
dA
a
per thyristor/diode; DC current
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
Characteristic Values
5
1.68
0.85
5.3
1.5
1.6
100
200
0.2
10
450
200
2
typ.
150
90
11
0.6
0.7
12.7
9.6
50
Unit
mA
V
V
m
V
mA
V
mA
mA
mA
us
us
uC
A
K/W
K/W
mm
mm
m/s²
FEATURES
* International standard package
SOT-227
* Glass passivated chips
* Isolation voltage 3600 V~
* RoHS compliant
APPLICATIONS
* DC motor control
* Softstart AC motor controller
* Light, heat and temperature
control
ADVANTAGES
* Space and weight savings
* Simple mounting with two screws
* Improved temperature and power
cycling
* Reduced protection circuits
P2
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