STD320 Datasheet, PDF (2/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules, Diode-Thyristor Modules

STD/SDT320
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
IRRM
IDRM
VT, VF
VTO
rT
VGT
IGT
VGD
IGD
IL
IH
tgd
tq
QS
IRM
RthJC
RthJK
dS
dA
a
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=600A; TVJ=25^oC
For power-loss calculations only (TVJ=140^oC)
VD=6V;
VD=6V;
TVJ=TVJM;
TVJ=25^oC
TVJ=-40^oC
TVJ=25^oC
TVJ=-40^oC
VD=2/3VDRM
TVJ=25^oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25^oC; VD=6V; RGK=
TVJ=25^oC; VD=1/2VDRM
IG=1A; diG/dt=1A/us
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=50V/us; VD=2/3VDRM
TVJ=125^oC; IT, IF=400A; -di/dt=50A/us
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
Characteristic Values
Unit
70
mA
40
mA
1.32
V
0.8
V
0.82
m
2
3
V
150
200
mA
0.25
V
10
mA
200
mA
150
mA
2
us
typ.
200
us
760
275
0.112
0.056
0.152
0.076
12.7
9.6
50
uC
A
K/W
K/W
mm
mm
m/s²
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits