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STD165GKXX Datasheet, PDF (2/4 Pages) Sirectifier Semiconductors – Thyristor-Diode Modules
STD165GKXX
Thyristor-Diode Modules
Symbol
Test Conditions
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VT, VF IT, IF=300A; TVJ=25oC
VTO For power-loss calculations only (TVJ=TVJM)
rT
VGT VD=6V;
IGT
VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
VGD TVJ=TVJM;
VD=2/3VDRM
IGD
TVJ=TVJM;
VD=2/3VDRM
IL
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
IH
TVJ=25oC; VD=6V; RGK=
tgd
TVJ=25oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
tq
TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
IRM
RthJC
per thyristor/diode; DC current
per module
RthJK
per thyristor/diode; DC current
per module
dS Creeping distance on surface
dA Creepage distance in air
a Maximum allowable acceleration
Characteristic Values
Unit
40
mA
1.36
V
0.8
V
1.6
m
2
2.6
V
150
200
mA
0.25
V
10
mA
200
mA
150
mA
2
us
typ.
150
us
550
235
0.155
0.0775
0.225
0.1125
12.7
9.6
50
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* DCB base plate
* Glass passivated chips
* Isolation voltage 3600 V~
* UL File NO.E310749
* RoHS compliant
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
P2
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