SID200S12 Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – SPT IGBT Modules

SID200S12
SPT IGBT Modules
Characteristics
Symbol
Conditions
IGBT
VGE(th)
ICES
VCE(TO)
rCE
VGE = VCE, IC = 6mA
VGE = 0; VCE = VCES; Tj = 25(125)^oC
Tj = 25(125)^oC
VGE = 15V, Tj = 25(125)^oC
VCE(sat) IC =150A; VGE = 15V; chip level
Cies under following conditions
Coes VGE = 0, VCE = 25V, f = 1MHz
Cres
LCE
RCC'+EE' res., terminal-chip TC = 25(125)^oC
under following conditions:
td(on)
tr
VCC = 600V, IC = 150A
RGon = RGoff = 7 , Tj = 125^oC
td(off)
VGE = ± 15V
tf
Eon(Eoff)
Inverse Diode
under following conditions:
VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)^oC
V(TO) Tj = 25(125)^oC
rT
Tj = 25(125)^oC
IRRM
IF = 150A; Tj = 125^oC
Qrr di/dt = 4800A/us
Err
VGE = V
Thermal Characteristics
Rth(j-c) per IGBT
Rth(j-c)D per Inverse Diode
Rth(c-s) per module
Mechanical Data
Ms
to heatsink M6
Mt
to terminals M6
w
TC = 25^oC, unless otherwise specified
min.
typ.
max.
Units
4.8
5.5
6.45
V
0.2
0.6
mA
1(0.9) 1.15(1.05)
V
6(8)
8(10)
m
1.9(2.1) 2.35(2.55)
V
13
2
nF
2
20
nH
0.35(0.5)
m
125
ns
50
ns
620
ns
55
ns
18(15)
mJ
2(1.8)
2.5
V
1.1
1.2
V
6
8.7
m
190
A
24
uC
8
mJ
0.095 K/W
0.25
K/W
0.038 K/W
3
5
Nm
2.5
5
Nm
325
g