SID100S12 Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – SPT IGBT Modules

SID100S12
SPT IGBT Modules
Characteristics
Symbol
Conditions
IGBT
VGE(th)
ICES
VCE(TO)
rCE
VGE = VCE, IC = 3mA
VGE = 0; VCE = VCES; Tj = 25(125)^oC
Tj = 25(125)^oC
VGE = 20V, Tj = 25(125)^oC
VCE(sat) IC = 50A; VGE = 15V; chip level
Cies under following conditions
Coes VGE = 0, VCE = 25V, f = 1MHz
Cres
LCE
RCC'+EE' res., terminal-chip TC = 25(125)^oC
under following conditions:
td(on)
tr
VCC = 600V, IC = 50A
RGon = RGoff = 15 , Tj = 125^oC
td(off)
VGE = ± 15V
tf
Eon(Eoff)
Inverse Diode
under following conditions:
VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)^oC
V(TO) Tj = 25(125)^oC
rT
Tj = 25(125)^oC
IRRM
IF = 75A; Tj = 125^oC
Qrr di/dt = 3100A/us
Err
VGE = V
Thermal Characteristics
Rth(j-c) per IGBT
Rth(j-c)D per Inverse Diode
Rth(c-s) per module
Mechanical Data
Ms
to heatsink M6
Mt
to terminals M5
w
TC = 25^oC, unless otherwise specified
min.
typ.
max.
Units
4.8
5.5
6.45
V
0.1
0.3
mA
1(0.9) 1.15(1.05)
V
13(16) 16(20)
m
1.9(2.1) 2.35(2.55)
V
6.2
0.74
nF
0.71
25
nH
0.75(1)
m
150
ns
45
ns
560
ns
50
ns
8.5(7.5)
mJ
2(1.8)
2.5
V
1.05
1.3
V
13
16
m
105
A
10.5
uC
3.4
mJ
0.21
K/W
0.5
K/W
0.05
K/W
3
5
Nm
2.5
5
Nm
160
g