SID100N12 Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – NPT IGBT Modules

SID100N12
NPT IGBT Modules
Characteristics
Symbol
Conditions
IGBT
VGE(th)
ICES
VCE(TO)
rCE
VGE = VCE, IC =2mA
VGE = 0; VCE = VCES; Tj = 25(125)^oC
Tj = 25(125)^oC
VGE = 15V, Tj = 25(125)^oC
VCE(sat) IC =75A; VGE = 15V; chip level
Cies under following conditions
Coes VGE = 0, VCE = 25V, f = 1MHz
Cres
LCE
RCC'+EE' res., terminal-chip TC = 25(125)^oC
under following conditions:
td(on)
tr
VCC = 600V, IC = 75A
RGon = RGoff =15 , Tj = 125^oC
td(off)
VGE = ± 15V
tf
Eon(Eoff)
Inverse Diode
under following conditions:
VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)^oC
V(TO) Tj = 125^oC
rT
Tj = 125^oC
IRRM IF = 75A; Tj = 25(125)^oC
Qrr di/dt = 800A/us
Err
VGE = V
FWD under following conditions:
VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)^oC
V(TO)
Tj = 125^oC
rT
Tj = 125^oC
IRRM
IF =75A; Tj = 25^oC
Qrr
di/dt = A/us
Err
VGE = V
Thermal Characteristics
Rth(j-c) per IGBT
Rth(j-c)D per Inverse Diode
Rth(j-c)FD per FWD
Rth(c-s) per module
Mechanical Data
Ms
to heatsink M6
Mt
to terminals M5
w
TC = 25^oC, unless otherwise specified
min.
typ.
max.
Units
4.5
5.5
6.5
V
0.1
0.3
mA
1.4(1.6) 1.6(1.8)
V
14.6(20) 18.6(25.3) m
2.5(3.1) 3(3.7)
V
5
6.6
0.72 0.9
nF
0.38 0.5
30
nH
0.75(1)
m
30
60
ns
70
140
ns
450
600
ns
70
90
ns
10(8)
mJ
2(1.8)
2.5
V
1.2
V
12
15
m
27(40)
A
3(10)
uC
mJ
1.85(1.6) 2.2
V
1.2
V
9
11
m
30(45)
A
3.5(11)
uC
mJ
0.18
K/W
0.5
K/W
0.36
K/W
0.05
K/W
3
5
Nm
2.5
5
Nm
160
g