SG45N12T Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – Discrete IGBTs

SG45N12T
Discrete IGBTs
Symbol
Test Conditions
gts
IC(ON)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC=IC90; VCE=10V
Pulse test, t 300us, duty cycle 2%
VGE=10V; VCE=10V
VCE=25V; VGE=0V; f=1MHz
IC=IC90; VGE=15V; VCE=0.5VCES
Inductive load, TJ=25^oC
IC=IC90; VGE=15V;
VCE=0.8VCES'; RG=Roff=5
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
Inductive load, TJ=125^oC
IC=IC90; VGE=15V;
VCE=0.8VCES'; RG=Roff=5
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
(TJ=25^oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
33
44
S
220
4700
255
89
170
28
57
55
28
370
390
14
64
32
3.0
660
740
25
0.25
A
pF
nC
ns
ns
800
ns
700
ns
25
mJ
ns
ns
mJ
ns
ns
mJ
0.42
K/W
K/W