SG23N06T Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – Discrete IGBTs

SG23N06T, SG23N06DT
Discrete IGBTs
Symbol
Test Conditions
gts
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC=IC90; VCE=10V
Pulse test, t 300us, duty cycle 2%
VCE=25V; VGE=0V; f=1MHz
IC=IC90; VGE=15V; VCE=0.5VCES
Inductive load, TJ=25^oC
IC=IC90; VGE=15V; L=100uH
VCE=0.8VCES; RG=Roff=10
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
Inductive load, TJ=125^oC
IC=IC90; VGE=15V; L=100uH
VCE=0.8VCES; RG=Roff=10
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
(TJ=25^oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
9
17
S
1500
120
pF
40
55
13
nC
17
15
ns
25
ns
75
140
ns
60
110
ns
0.24
0.36
mJ
15
ns
25
ns
0.15
mJ
130
ns
110
ns
0.6
mJ
0.83
K/W
0.25
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
VF
IRM
trr
RthJC
IF=IC90; VGE=0V;TJ=150^oC
Pulse test, t 300us, duty cycle 2%; TJ=25^oC
IF=IC90; VGE=0V; -diF/dt=100A/us
VR=100V; TJ=100^oC
IF=1A; -di/dt=100A/us; VR=30V; TJ=25^oC
(TJ=25^oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
1.6
V
2.5
6
A
100
ns
25
ns
0.9
K/W