SDD120NXXB Datasheet, PDF (2/4 Pages) Sirectifier Semiconductors – Diode-Diode Modules

SDD10NXXB
Diode-Diode Modules
Symbol
Test Conditions
Characteristic Values
IR
TVJ=TVJM; VR=VRRM
VF
IF=360A; TVJ=25^oC
15
1.63
VTO For power-loss calculations only
0.75
rTTVJ=TVJM1.95
QS TVJ=125^oC; IF=50A; -di/dt=3A/us
170
IRM
45
RthJC
per diode; DC current
per module
0.30
0.145
RthJK
per diode; DC current
per module
0.50
0.245
dS Creepage distance on surface
12.7
dA Strike distance through air
9.6
a Maximum allowable acceleration
50
Unit
mA
V
V
m
uC
A
K/W
K/W
mm
mm
m/s²
FEATURES
* International standard package
* Copper base plate
* Glass passivated chips
* Isolation voltage 3600 V~
* UL file NO.310749
* RoHs compliant
APPLICATIONS
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
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