SD45 Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – Discrete Diodes

SD45
Discrete Diodes
70
A
60
I_{F 50}
40
T _VJ=150°C
T_VJ= 25°C
500
50Hz, 80% V_RRM
A
I_F
S
4
M
00
T_VJ = 45°C
300
30
200
20
T_VJ = 150°C
100
10
0
0.0
0.4
0.8
1.2 V 1.6
V_F
F ig. 1 F orward current vers us voltage
drop per diode
100
W
80
P _tot
60
40
0
0.001
0.01
0.1 s 1
t
F ig. 2 S urge overload current
R _thHA :
0.5 K /W
1.0 K /W
1.5K /W
2.0 K /W
3.0 K /W
4.0 K /W
6.0 K /W
10⁴
A²s ^{V R = 0 V}
I²t
T_VJ = 45°C
10³
T_VJ = 150°C
10²
1
2 3 4 15 6 7 8ms9 0
t
F ig. 3 I²t vers us time per diode
50
A
40
I_F(AV)M
30
20
20
10
0
0
10
20
30
40 A 0 20 40 60 80 100 120 140 °C
I _{d(AV )M}
T _amb
F ig. 4 P ower dissipation versus direct output current and ambient temperature, sine 180°
0.6
0
0 20 40 60 80 100 120 140 °C
T_C
F ig. 5 Max. forward current vers us
cas e temperature
K /W
Z _{thJ C}
0.4
0.2
0.0
0.001
0.01
0.1
F ig. 6 T rans ient thermal impedance junction to cas e
C ons tants for Z_thJC calculation:
i
1
2
3
4
DSI45
1
s
10
t
R _thi (K /W )
0.1633
0.2517
0.0933
0.04167
t_i (s )
0.016
0.118
0.588
2.6