SD10 Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – Discrete Diodes

SD10
Discrete Diodes
50
50A
A40
I_{F 40}
I_{F 30}
30
20
20
10
10
T_VJ=150°C
T_VJ= 25°C
T_VJ=150°C
T_VJ= 25°C
250
50Hz, 80% V_RRM
A250
I_FSM^200A
50Hz, 80% V_RRM
T_VJ = 45°C
I_FSM²⁰⁰
T_VJ = 45°C
150
150
100
100
50
50
T_VJ = 150°C
T_VJ = 150°C
10³
A²s
V_R = 0 V
10³
I²t
A²s ^{VR = 0 V}
I²t
T_VJ = 45°C
T_VJ = 45°C
T_VJ = 150°C
T_VJ = 150°C
0
0 0.0
0.4
0.8
1.2 V 1.6
0.0
0.4
0.8 V_F 1.2 V 1.6
Fig. 1 Forward current ver^Vsu^F s voltage
Fig. 1 F_do_rr_ow_pa_pr_ed_rc_du_iorr_de_ent versus voltage
drop per diode
60
60
W
W
P^P_tot^t₄^ot₄₀₀
2²0⁰
0
10²
0.0001
0.01
0.1 s 1
110²
2 3 4 5 6 7 8ms910
0.001
0.01
0t .1 s 1
1
2 3 4t 5 6 7 8ms910
Fig. 2 Surge overload current ^t
Fig. 3 I²t versus time per diode ^t
Fig. 2 Surge overload current
Fig. 3 I²t versus time per diode
R_thHRA :_{thHA :}
1
2
KK₁₂//WW_{KK//W W}
3 K₃/W_K/W
5 K₅/W_K/W
7 K₇/W_K/W
10 K₁/W_{0 K/W}
15 K₁/W_{5 K/W}
35
A ³⁵
A
30
30
I_{F(AV)M2IF5(AV)M25}
20 ₂₀
15 ₁₅
10 10
55
0₀
0⁰
0₀
1₁0₀
2²0⁰
3³0⁰A^A 0 ⁰ 20²⁰ 40⁴⁰60⁶⁰80 ⁸⁰100¹⁰1⁰20¹²1⁰40¹Â°⁴C^{0 °C}
0 2⁰0 4²0⁰ 6⁴0⁰ 8⁶0⁰ 10⁸0⁰12¹0⁰⁰14¹0²Â°⁰C^{140 °C}
I ^I_d(d_A(A_VV_)M)M
T_amb^Tamb
T_C
T_C
F_Fig_ig. _.4₄ P_Po_ow_we_er_rd_di_is_ss_si_ip_pa_at_ti_io_onn _vv_ee_rr_ss_uu_ss_dd_irir_ee_cc_tt_oo_uu_tptp_uu_t t_cuc_ru_rr_er_ne_tn_at_na_dn_ad_ma_bm_ieb_nie_t n_tet_mte_pm_erp_ae_tura_retu_, r_se_in, _esi₁n₈e₀1_°80 ° _Fig.F₅ig_M. 5_axM_{. fo}a_rx_w. _afo_rdrw_ca_ur_rd_rec_nu_t r_vr_ee_rn_st_uv_sersus
case^cate^sm^ep^te^er^mat^pu^ere^rature
1₁.2_.2
K_K/W_/W
1.0
1.0
Z ZthJC
thJC
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0⁰.^.0⁰⁰¹
0.01
0.1
Fig. 6^0.0T⁰r¹ansient therma⁰l^.0im¹ pedance junctio^0.n¹ to case
Fig. 6 Transient thermal impedance junction to case
Constants for Z_thJC calculation:
Constants for Z_thJC calculation:
i
i
1
R_thi (K/W)
t_i (s)
R_thi
(K/W)
0.01362
t_i (s) _0.0001
1 2 0.01306.12962 0.00001.00316
2 3 0.19602.267 0.00301.6023
3⁴
4⁵
0.267^0.3052 0.023^0.4
0.305⁰2^.218 0.4 ^0.15
1
s
10 ⁵
0.218
0.15
1
s^t
10
t
P2
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