S3PDB180 Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – Three Phase Rectifier Modules

S3PDB180
Three Phase Rectifier Modules
Symbol
Test Conditions
IR
VR=VRRM; TVJ=25^oC
VR=VRRM; TVJ=TVJM
VF IF=300A; TVJ=25^oC
VTO For power-loss calculations only
rT
TVJ=TVJM
per diode
RthJC _{per module}
per diode
RthJK _{per module}
dS Creeping distance on surface
dA Creepage distance in air
a Max. allowable acceleration
Characteristic Values
<_ 0.3
<_ 5
<_ 1.65
0.8
3
0.65
0.108
0.83
0.138
10
9.4
50
Unit
mA
V
V
m
K/W
K/W
mm
mm
m/s²
FEATURES
* Package with screw terminals
* Isolation voltage 3000 V~
* Planar passivated chips
* Blocking voltage up to 1800 V
* Low forward voltage drop
APPLICATIONS
* Supplies for DC power equipment
* Input rectifiers for PWM inverter
* Battery DC power supplies
* Field supply for DC motors
ADVANTAGES
* Easy to mount with two screws
* Space and weight savings
* Improved temperature and power
cycling