MUR6030_16 Datasheet, PDF (2/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Diodes

MUR6030, MUR6040, MUR6060
Ultra Fast Recovery Diodes
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
RthCK
RthJA
trr
IRM
TVJ=25^oC; VR=VRRM
TVJ=25^oC; VR=0.8^.VRRM
TVJ=125^oC; VR=0.8^.VRRM
IF=70A; TVJ=150^oC
TVJ=25^oC
For power-loss calculations only
TVJ=TVJM
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25^oC
VR=350V; IF=60A; -diF/dt=480A/us; L<_0.05uH; TVJ=100^oC
Characteristic Values
Unit
typ.
max.
200
uA
100
uA
14
mA
1.5
1.8
V
1.13
V
4.7
m
0.75
0.25
K/W
35
35
50
ns
19
21
A
FEATURES
* International standard package
JEDEC TO-247AC
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
P2
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