MBR850_16 Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – High Tjm Low IRRM Schottky Barrier Diodes

MBR850 thru MBR860
High Tjm Low IRRM Schottky Barrier Diodes
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
6
4
2
RESISTIVE OR
INDUCTIVE LOAD
0₂₅
50
75
100
125
CASE TEMPERATURE , C
150
175
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
TJ = 125 C
10
1.0
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
0.1
0.01
TJ = 25 C
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
1.0
TJ = 25 C
0.1
0
PULSE WIDTH 300us
2% Duty cycle
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
TJ = 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
P2
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