HUR820_16 Datasheet, PDF (2/2 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

HUR820
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
IR
VF
RthJC
RthCH
trr
IRM
TVJ=25^oC; VR=VRRM
TVJ=150^oC; VR=VRRM
IF=8A; TVJ=150^oC
TVJ=25^oC
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25^oC
VR=100V; IF=10A; -diF/dt=100A/us; TVJ=100^oC
Characteristic Values
Unit
typ.
max.
50
uA
0.2
mA
0.94
1.30
V
0.5
2.5
K/W
25
ns
4.1
A
FEATURES
* International standard package
* Glass passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
P2
©2008 SIRECTIFIER All rights reserved,
www.sirectifier.com
Tel: [phone] Fax: [phone] E-mail: [e-mail]