3TA80GKXXNB Datasheet, PDF (2/3 Pages) Sirectifier Semiconductors – Three Phase Half Bridge

3TA80GKxxNB
Three Phase Half Bridge
Symbol
Test Conditions
IDRM
IRRM
at VDRM, single phase, half wave, Tj=150^oC
VTM On-State Current 240A, Tj=25^oC Inst. measurement
IGT/VGT Tj=25^oC, IT=1A, VD=6V
VGD Tj=150^oC, VD=1/2VDRM
tgt IT=80A, IG=200mA, Tj=25^oC, VD=1/2VDRM, dIG/dt=1A/us
dv/dt Tj=150^oC, VD=2/3VDRM, Exponential wave
IH
Tj=25^oC
RthJC Junction to case (1/3 Module)
min.
typ.
max.
Unit
12
12
mA
1.20
V
75
mA/V
0.25
V
10
us
500
V/us
100
mA
0.35
o_C/W