3TA200GKXXNB Datasheet, PDF (2/3 Pages) Sirectifier Semiconductors – Three Phase Half Bridge

3TA200GKxxNB
Three Phase Half Bridge
Symbol
Test Conditions
IDRM
IRRM
at VDRM, single phase, half wave, Tj=150^oC
VTM On-State Current 630A, Tj=25^oC Inst. measurement
IGT
VGT
Tj=25^oC, IT=1A, VD=6V
VGD
tgt
dv/dt
IH
Tj=150^oC, VD=1/2VDRM
IT=200A, IG=200mA, Tj=25^oC, VD=1/2VDRM, dIG/dt=1A/us
Tj=150^oC, VD=2/3VDRM, Exponential wave
Tj=25^oC
RthJC Junction to case (1/3 Module)
min.
typ.
max.
Unit
60
60
mA
1.20
V
150
mA
2
V
0.25
200
70
V
10
us
V/us
mA
0.12
o_C/W