SURB1610CT_16 Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes

SURB1610CT thru SURB1620CT
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
C(TAB)
AC A
A
A
A=Anode, C(TAB)=Cathode
SURB1610CT
SURB1620CT
VRSM
V
100
200
VRRM
V
100
200
Dimensions TO-263(D²PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51
1.14
0.99
1.40
0.46 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
Symbol
Test Conditions
IFRMS
IFAVM
IFRM
IFSM
I²t
TVJ=TVJM
TC=115^oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45^oC
TVJ=150^oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ=45^oC
TVJ=150^oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ
TVJM
Tstg
Ptot
TC=25^oC
Md Mounting torque
Weight
Maximum Ratings
Unit
16
8
A
130
100
110
85
A
95
50
50
36
A²s
37
-40...+150
150
o_C
-40...+150
50
W
0.4...0.6
Nm
2
g
P1
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