SUR2X60-02 Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR2x60-02
Ultra Fast Recovery Epitaxial Diodes
SUR2x60-02
VRSM
V
200
VRRM
V
200
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.09
4.29
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.72
4.42
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Symbol
Test Conditions
IFRMS
IFAVM
IFRM
IFSM
I²t
TVJ=TVJM
TC=85^oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45^oC
TVJ=150^oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ=45^oC
TVJ=150^oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ
TVJM
Tstg
Ptot
TC=25^oC
VISOL
50/60Hz, RMS
IISOL<_1mA
Md
Mounting torque
Terminal connection torque (M4)
Weight
Maximum Ratings
100
71
800
950
1020
800
870
4500
4300
3200
3140
-40...+150
150
-40...+150
150
2500
1.1-1.5/9-13
1.1-1.5/9-13
30
Unit
A
A
A²s
o_C
W
V~
Nm/lb.in.
g