SUR2960S Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Ultra Fast Recovery Epitaxial Diodes

SUR2960S
Ultra Fast Recovery Epitaxial Diodes
C(TAB)
A
A
NC
Dimensions TO-263(D²PAK)
C
A=Anode, NC= No connection, TAB=Cathode
SUR2960S
VRSM
V
600
VRRM
V
600
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
Symbol
Test Conditions
IFRMS
IFAVM
IFRM
IFSM
I²t
TVJ=TVJM
TC=85^oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
TVJ=45^oC
TVJ=150^oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ=45^oC
TVJ=150^oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ
TVJM
Tstg
Ptot
TC=25^oC
Md Mounting torque
Weight
Maximum Ratings
Unit
70
29
A
375
300
320
260
A
280
450
420
340
A²s
320
-40...+150
150
o_C
-40...+150
125
W
0.4...0.6
Nm
2
g