STYN608 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Thyristor Discretes(SCRs)

STYN208(S) thru STYN1008(S)
Thyristor Discretes(SCRs)
Dimensions TO-220AB
REF.
G
A
A
G
K
Dimensions TO-263(D²PAK)
A
E
L2
A
C2
G
K
L
L3
D
A1
B2
C
R
B
G
A2
2mm min.
FLAT ZONE
V2
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
REF.
Millimeters
Min. Typ. Max.
Inches
Min. Typ. Max.
A 4.30
4.60 0.169
0.181
A1 2.49
2.69 0.098
0.106
A2 0.03
0.23 0.001
0.009
B 0.70
0.93 0.027
0.037
B2 1.25 1.40
0.048 0.055
C 0.45
0.60 0.017
0.024
C2 1.21
1.36 0.047
0.054
D 8.95
9.35 0.352
0.368
E 10.00
10.28 0.393
0.405
G 4.88
5.28 0.192
0.208
L 15.00
15.85 0.590
0.624
L2 1.27
1.40 0.050
0.055
L3 1.40
1.75 0.055
0.069
R
0.40
0.016
V2 0°
8° 0°
8°
Value
Unit
I_T(RMS)
IT_(AV)
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Tc = 110°C
8
A
Tc = 110°C
5
A
I_TSM
Non repetitive surge peak on-state
current
I^²t
dI/dt
I_GM
P_G(AV)
T_stg
Tj
V_RGM
I^²t Value for fusing
Critical rate of rise of on-state current
I_G = 2 x I_GT , tr £ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
100
Tj = 25°C
A
95
Tj = 25°C
45
A²S
Tj = 125°C
50
A/µs
Tj = 125°C
4
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
5
V
P1
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