STYN225 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Discrete Thyristors(SCRs)

STYN225(S) thru STYN1025(S)
Discrete Thyristors(SCRs)
G
A
K
A
G
K
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
AA
Dimensions TO-263(D²PAK)
G
K
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06
2.03
4.83
2.79
0.51
1.14
0.99
1.40
0.46
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.29
6.22
8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46
0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575
.090
.040
.050
0
.625
.110
.055
.070
.008
.018 .029
Value
Unit
I_T(RMS)
IT_(AV)
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Tc = 100°C
25
A
Tc = 100°C
16
A
I_TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
314
A
tp = 10 ms
300
I^²t
I^²t Value for fusing
tp = 10 ms
Tj = 25°C
450
A²S
Critical rate of rise of on-state current
dI/dt
I_G = 2 x I_GT , tr £ 100 ns
F = 60 Hz
Tj = 125°C
50
A/µs
I_GM
Peak gate current
tp = 20 µs
Tj = 125°C
4
A
P_{G(AV) Average gate power dissipation}
Tj = 125°C
1
W
T_stg
Storage junction temperature range
Tj
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V_{RGM Maximum peak reverse gate voltage (for TN8 & TYN only)}
5
V