STYN210_16 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Thyristor Discretes(SCRs)

STYN210(S) thru STYN1010(S)
Thyristor Discretes(SCRs)
Dimensions TO-220AB
REF.
G
A
A
G
K
Dimensions TO-263(D²PAK)
A
G
K
L2
L
L3
ABSOLUTE RATINGS (limiting values)
A
E
C2
D
A1
B2
C
R
B
G
A2
2mm min.
FLAT ZONE
V2
REF.
Millimeters
Min. Typ. Max.
Inches
Min. Typ. Max.
A 4.30
4.60 0.169
0.181
A1 2.49
2.69 0.098
0.106
A2 0.03
0.23 0.001
0.009
B 0.70
0.93 0.027
0.037
B2 1.25 1.40
0.048 0.055
C 0.45
0.60 0.017
0.024
C2 1.21
1.36 0.047
0.054
D 8.95
9.35 0.352
0.368
E 10.00
10.28 0.393
0.405
G 4.88
5.28 0.192
0.208
L 15.00
15.85 0.590
0.624
L2 1.27
1.40 0.050
0.055
L3 1.40
1.75 0.055
0.069
R
0.40
0.016
V2 0°
8° 0°
8°
Symbol
I_T(RMS)
Parameter
RMS on-state current (180° conduction angle)
Value
Unit
Tc = 100°C
10
A
IT_{(AV) Average on-state current (180° conduction angle)}
Tc = 100°C
6.4
A
I_TSM
I^²t
dI/dt
Non repetitive surge peak on-state
current
I^²t Value
Critical rate of rise of on-state current
Gate supply:IG = 100mA dIG/dt = 1A/µs
tp = 8.3 ms
105
A
tp = 10 ms
100
tp = 10 ms
50
A²S
50
A/µs
T_stg
Storage junction temperature range
Tj
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Tl
Maximum lead soldering temperature during 10s at 4.5mm from case
STYN
260
°C
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
210
410
610
810
1010
200
400
600
800
1000
V
P1
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