STOE30G06 Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – High Efficiency Thyristor Discretes

STOE30G06 thru STOE30G12
High Efficiency Thyristor Discretes
A
A(TAB)
G
A
K
K=Cathode, A=Anode, G=Cate
STOE30G06
STOE30G08
STOE30G10
STOE30G12
VRRM
V
600
800
1000
1200
VRSM
V
700
900
1100
1300
Dimensions TO-247AD
K
G
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F
5.4 6.2
G 1.65 2.13
H
- 4.5
J
1.0 1.4
K 10.8 11.0
L
4.7 5.3
M
0.4 0.8
N
1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
Symbol
Test Conditions
ITRMS
ITAVM
ITSM
i²t
TVJ=TVJM
TC=120^oC; 180^o sine
TVJ=45^oC
VR=0
TVJ=TVJM
VR=0
TVJ=45^oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.3A
diG/dt=0.3A/us
repetitive, IT=90A
non repetitive, IT=30A
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=300us
PGAV
VRGM
TVJ
TVJM
Tstg
Md Mounting torque (M3)
Fc Mounting force with clip
Weight _typical
Maximum Ratings
47
30
300
320
270
290
450
440
365
355
150
500
1000
10
5
0.5
10
-55...+150
150
-55...+150
0.8...1.2
20...120
6
Unit
A
A
A²s
A/us
V/us
W
W
V
o_C
Nm
N
g
P1
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