SRBD400100CT Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Schottky Barrier Rectifier Diode Modules

SRBD400100CT thru SRBD400200CT
Schottky Barrier Rectifier Diode Modules
21
Dimensions in mm
VRSM
V
SRBD400100CT 100
SRBD400150CT 150
SRBD400200CT 200
3
VRRM
V
100
150
200
Symbol
Test Conditions
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
IO
I FRM
I FSM
TC
Tstg
TJ
R_tjc
VF
IR
Average Rectified Forward Current
Per Leg
(Rated V_R ) T_C = 115°C
Per Package
Peak Rectified Forward Current,Per Leg
(Rated V_R, Square Wave,20 kHz),T_C = 125°C
Non-repetitive Peak Surge Current
Per Package
(Surge applied at rated load conditions halfwave, single
phase, 60 Hz)
Storage/Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction toCase
Maximum Instantaneous Forward Voltage
Per Leg (IF=200A)
Maximum Instantaneous Forward Voltage
Per Leg (IF=200A)
MaximumInstantaneous Reverse Current
(VR=VRRM)
Per Leg
TJ=25 ^OC
TJ=125 ^OC
Cj Typical Junction Capacitance
IRM ^{Typical Peak Reverse Recovery Current}
(IF=1.0A,di/dt=50A/us)
Tj=25°C
Weight
Per Leg
Characteristic Values
100, 150，200
200
400
200
2800
-55...+175
0.20
400100
400150
400200
0.85
0.90
0.95
400100
0.75
400150
0.80
400200
0.85
TJ=25 ^OC
TJ=100 ^OC
30
80
Measured at 1MHz,Vr=4V
290
2
80
Unit
V
A
A
A
o_C
°C/W
V
mA
pF
A
g
P1
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