SMOS44N80 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Power MOSFETs

SMOS44N80
Power MOSFETs
SD
S
G
G=Gate, D=Drain,S=Source
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
EAS
VISOL
Md
W eight
Test Conditions
TJ=25^oC to 150^oC
TJ=25^oC to 150^oC; RGS=1M
Continuous
Transient
TC=25^oC; Chip capability
TC=25^oC; pulse width limited by TJM
TC=25^oC
TC=25^oC
IS IDM; di/dt 100A/us; VDD
TJ 150^oC; RG=2
TC=25^oC
VDSS'
TC=25^oC
50/60Hz,RMS t=1 min
IISOL 1mA
t=1 s
Mounting torque
Terminal connection torque
Maximum Ratings
800
800
±20
±30
44
176
44
64
5
Unit
V
V
A
A
A
mJ
V/ns
700
-55...+150
150
-55...+150
4
2500
3000
1.5/13
1.5/13
30
W
o_C
J
V~
Nm/Ib.in.
g