SMOS44N50D2 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Power MOSFETs

SMOS44/48N50D2, SMOS44/48N50D3
Power MOSFETs
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Symbol
VDSS
VDGR
VGS
VGSM
ID25
Test Conditions
TJ=25^oC to 150^oC
TJ=25^oC to 150^oC; RGS=1M
Continuous
Transient
TC=25^oC
IDM
TC=25^oC;pulse width limited by max. TJM
IAR
EAR
dv/dt
PD
VRRM
IFAVM
IFRM
PD
TJ
TJM
Tstg
VISOL
Md
W eight
TC=25^oC
Repetitive
IS IDM; -di/dt 100A/us; VDD
TJ 150^oC; RG=2
TC=25^oC
VDSS'
TC=70^oC; rectangular; d=0.5
tp <10us; pulse width limited by TJ
TC=25^oC
50/60 Hz, RMS t=1 min
IISOL 1 mA
t=1 s
Mounting torque
Terminal connection torque(M4)
44N50
48N50
44N50
48N50
Maximum Ratings
500
500
±20
±30
44
48
176
192
24
30
5
Unit
V
V
A
A
A
mJ
V/ns
520
600
60
800
180
-40…+150
150
-40…+150
2500
3000
1.5/13
1.5/13
30
W
V
A
A
W
o_C
V~
Nm/Ib.in.
g