SII100N06 Datasheet, PDF (1/4 Pages) Sirectifier Semiconductors – NPT IGBT Modules

SII100N06
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
Absolute Maximum Ratings
Symbol
Conditions
IGBT Wechselrichter/ IGBT Inverter
VCES
IC
ICRM
Ptot
TC= 25(70)^oC
TC= 70^oC, tP =1ms
TC= 25^oC, Tvj= 150^oC
VGES
Diode Wechselrichter/ Diode Inverter
IF
IFRM
tP =1ms
I ²t
VR=0V, tP =10ms; TVj=125^oC
Module Isolation/ Module Isolation
VISOL
RMS, f=50Hz, t=1min, NTC connect to Baseplate
TC = 25^oC, unless otherwise specified
Values
Units
600
V
130(100)
A
200
A
445
W
+^_20
V
100
A
200
A
1.25
A²s
2500
V
Sirectifier^R