SID75S12 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – SPT IGBT Modules

SID75S12
SPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
Absolute Maximum Ratings
Symbol
Conditions
IGBT
VCES
IC
ICRM
TC= 25(80)^oC
TC= 25(80)^oC, tP =1ms
VGES
TVj,(Tstg) TOPERATION <_ Tstg
Visol
AC, 1min
Inverse Diode
IF=-IC
TC= 25(80)^oC
IFRM
TC= 25(80)^oC, tP =1ms
IFSM
tP =10ms; sin.;Tj=150 ^oC
TC = 25^oC, unless otherwise specified
Values
Units
1200
V
100(70)
A
200(140)
A
+_20
V
_40...+150(125)
o_C
4000
V
75(50)
A
200(140)
A
550
A