SG40T120DB Datasheet, PDF (1/6 Pages) Sirectifier Semiconductors – Trench Field Stop IGBT technology

SG40T120DB
Discrete IGBTs
V_CES = 1200V
I_C100 = 40A
V_CE(sat) ≤ 2.9V
t_fi(typ) = 60ns
Dimensions TO-247AD
G=Gate, C=Collector,
E=Emitter,TAB=Collector
IGBT
SG40T120DB
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F
5.4 6.2
G 1.65 2.13
H
- 4.5
J
1.0 1.4
K 10.8 11.0
L
4.7 5.3
M
0.4 0.8
N
1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
Symbol
Test Conditions
Maximum Ratings
Unit
VCES
VCGR
TJ=25^oC to 150^oC
TJ=25^oC to 150^oC; RGE=1 M ;
1200
1200
V
VGES Continuous
VGEM Transient
IC25
IC100
ICM
TC=25^oC; limited by leads
TC=100^oC
TC=25^oC, 1 ms
SSOA VGE=15V; TVJ=125^oC; RG=5
(RBSOA) Clamped inductive load
PC TC=25^oC
±20
V
±30
60
40
A
180
ICM=120
@ 0.8 VCES
A
300
W
TJ
-55...+150
TJM
150
o_C
Tstg
-55...+150
Maximum lead temperature for soldering
300
o_C
1.6 mm (0.062 in.) from case for 10s
Maximum Tab temperature for soldering SMD devices for 10s
260
o_C
Md Mounting torque (M3)
Weight Typical
1.13/10
6
Nm/Ib.in.
g
(TJ=25^oC, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
Unit
min.
typ.
max.
BVCES
IC=1mA; VGE=0V
1200
V
VGE(th)
ICES
IGES
VCE(sat)
IC=750uA; VCE=VGE
VCE=VCES;
TJ=25^oC
VGE=0V;
TJ=125^oC
VCE=0V; VGE=±20V
IC=IC90; VGE=15V
5.0
5.8
6.5
V
250
uA
4
mA
±200
nA
2.7
2.9
V
P1
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