SG25S12T Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Discrete IGBTs

SG25S12T, SG25S12DT
C(TAB)
Discrete IGBTs
Dimensions TO-247AD
E
C
G=Gate, C=Collector,
G
E=Emitter,TAB=Collector
SG25S12T
SG25S12DT
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F
5.4 6.2
G 1.65 2.13
H
- 4.5
J
1.0 1.4
K 10.8 11.0
L
4.7 5.3
M
0.4 0.8
N
1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
Symbol
Test Conditions
VCES
VCGR
TJ=25^oC to 150^oC
TJ=25^oC to 150^oC; RGE=1 M ;
VGES Continuous
VGEM Transient
IC25 TC=25^oC
IC90 TC=90^oC
SSOA VGE=15V; TVJ=125^oC; RG=25
(RBSOA) Clamped inductive load, L=100uH
PC TC=25^oC
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Md Mounting torque (M3)
Weight
Maximum Ratings
1200
1200
±20
±30
46
25
ICM=48
@ 0.8 VCES
313
-55...+150
150
-55...+150
260
1.13/10
6
Unit
V
V
A
A
W
o_C
o_C
Nm/Ib.in.
g
Symbol
Test Conditions
BVCES
VGE(th)
ICES
IGES
V CE(sat)
IC=1500uA; VGE=0V
IC=1000uA; VCE=VGE
VCE=1200V; TJ=25^oC
VGE=0V;
TJ=150^oC
VCE=0V; VGE=±20V
IC=IC90; VGE=15V
(TJ=25^oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
1200
V
3.0
4.0
5.0
V
350
uA
1.4
mA
±100
nA
2.35
V