SG200N06S Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Discrete IGBTs

SG200N06S
Discrete IGBTs
EC
E
G
G=Gate, C=Collector, E=Emitter
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
37.80
30.30
38.20
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
3.30
0.780
4.57
0.830
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
Symbol
Test Conditions
VCES
VCGR
TJ=25^oC to 150^oC
TJ=25^oC to 150^oC; RGE=1 M ;
VGES Continuous
VGEM Transient
IC25 TC=25^oC
IC90 TC=90^oC
ICM TC=25^oC, 1 ms
SSOA VGE=15V; TVJ=125^oC; RG=22
(RBSOA) Clamped inductive load, L=30uH
PC TC=25^oC
TJ
TJM
Tstg
VISOL 50/60Hz
IISOL 1 mA
t =1 min
t =1 s
Md Mounting torque
Terminal connection torque(M4)
Weight
Maximum Ratings
600
600
±20
±30
200
100
300
ICM=100
@ 0.8 VCES
600
-55...+150
150
-55...+150
2500
3000
1.5/13
1.5/13
30
Unit
V
V
A
A
W
o_C
V~
Nm/Ib.in.
g
Symbol
Test Conditions
BVCES
VGE(th)
ICES
IGES
VCE(sat)
IC=250uA; VGE=0V
IC=10mA; VCE=VGE
VCE=0.8VCES; TJ=25^oC
VGE=0V;
TJ=125^oC
VCE=0V; VGE=±20V
IC=IC90; VGE=15V
(TJ=25^oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
600
V
2.5
6
V
200
uA
2
mA
±400
nA
2.5
V