SG12N06T Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Discrete IGBTs

SG12N06T, SG12N06DT
C(TAB)
Discrete IGBTs
Dimensions TO-247AD
E
C
G=Gate, C=Collector,
G
E=Emitter,TAB=Collector
SG12N06T
SG12N06DT
Dim. Millimeter
Min. Max.
A 19.81 20.32
B 20.80 21.46
C 15.75 16.26
D 3.55 3.65
E 4.32 5.49
F
5.4 6.2
G 1.65 2.13
H
- 4.5
J
1.0 1.4
K 10.8 11.0
L
4.7 5.3
M
0.4 0.8
N
1.5 2.49
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
Symbol
Test Conditions
VCES
VCGR
TJ=25^oC to 150^oC
TJ=25^oC to 150^oC; RGE=1 M ;
VGES Continuous
VGEM Transient
IC25 TC=25^oC
IC90 TC=90^oC
ICM TC=25^oC, 1 ms
SSOA VGE=15V; TVJ=125^oC; RG=33
(RBSOA) Clamped inductive load, L=300uH
PC TC=25^oC
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Md Mounting torque with screw M3
Mounting torque with screw M3.5
Weight
Symbol
Test Conditions
BVCES
VGE(th)
ICES
IGES
VCE(sat)
IC=250uA; VGE=0V
IC=250uA; VCE=VGE
VCE=0.8VCES; TJ=25^oC
VGE=0V;
TJ=125^oC
VCE=0V; VGE=±20V
IC=IC90; VGE=15V
Maximum Ratings
600
600
±20
±30
24
12
48
ICM=24
@ 0.8 VCES
100
-55...+150
150
-55...+150
300
Unit
V
V
A
A
W
o_C
o_C
0.45/4
0.55/5
6
Nm/Ib.in.
g
(TJ=25^oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
600
V
2.5
5.0
V
200
uA
1.5
mA
±100
nA
2.1
V