SDD10 Datasheet, PDF (1/1 Pages) Sirectifier Semiconductors – Discrete Diodes

3
2
1
1
SDD10N01
SDD10N02
SDD10N03
SDD10N04
SDD10N05
SDD10N06
SDD10N07
VRSM
V
50
100
200
400
600
800
1000
SDD10
Discrete Diodes
Dimensions TO-220AB
2
3
VRRM
V
50
100
200
400
600
800
1000
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Test Conditions
IF(AV)M
IFSM
TC=100^oC; 180^o sine
TVJ=45^oC;
TVJ=150^oC;
TVJ=45^oC;
I²t
TVJ=150^oC;
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
TVJ
TVJM
Tstg
Md Mounting torque
Weight
Symbol
Test Conditions
IR
VF
VTO
rT
RthJC
TVJ=TVJM; VR=VRRM
IF=45A; TVJ=25^oC
For power-loss calculations only
TVJ=TVJM
DC current
Maximum Ratings
Unit
10
A
100
110
90
A
100
50
50
41
A²s
42
-40...+180
180
o_C
-40...+150
0.4...0.6
Nm
4
g
Characteristic Values
Unit
<_ 0.5
mA
<_ 1.15
V
0.8
V
40
m
3.5
K/W