SBG1030 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Low VF Schottky Barrier Rectifiers

SBG1030 thru SBG1045
Low VF Schottky Barrier Rectifiers
C(TAB)
A
C
A
C
A=Anode, C=Cathode, TAB=Cathode
SBG1030
SBG1035
SBG1040
SBG1045
VRRM
VRMS
VDC
V
V
V
30
21
30
35
24.5 35
40
28
40
45
31.5 45
Dimensions TO-263(D²PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=95^oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
VF Maximum Forward Voltage At 5A DC (Note 1)
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=100^oC
CJ
ROJC
TJ
TSTG
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
Maximum Ratings
10
250
0.60
1.0
50
280
3.0
-55 to +125
-55 to +150
Unit
A
A
V
mA
pF
o_C/W
o_C
o_C
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: D²PAK molded plastic
* Polarity: As marked on the body
* Weight: 0.06 ounces, 1.7 grams