SBG1025L Datasheet, PDF (1/2 Pages) Diodes Incorporated – 10A SCHOTTKY BARRIER RECTIFIER

SBG1025L thru SBG1030L
Low VF Schottky Barrier Rectifiers
C(TAB)
A
C
A
C
A=Anode, C=Cathode, TAB=Cathode
SBG1025L
SBG1030L
VRRM
VRMS
VDC
V
V
V
25
17.5 25
30
21
30
Dimensions TO-263(D²PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=95^oC
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
IFSM _{Superimposed On Rated Load (JEDEC METHOD)}
VF
Maximum Forward
Voltage (Note 1)
IF=10A @TJ=25^oC
IF=10A @TJ=125^oC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25^oC
@TJ=100^oC
CJ
ROJC
TJ
TSTG
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
Maximum Ratings
10
250
0.45
0.35
5.0
500
350
2.0
-55 to +125
-55 to +150
Unit
A
A
V
mA
pF
o_C/W
o_C
o_C
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: D²PAK molded plastic
* Polarity: As marked on the body
* Weight: 0.06 ounces, 1.7 grams