S3PHB70_16 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Three Phase Half Controlled Bridge Modules

S3PHB70, S3PHBD70, S3PFB70
Three Phase Half Controlled Bridge Modules/Full Controlled Bridge
Dimensions in mm (1mm=0.0394")
S3PHB70
S3PHBD70
S3PFB70
S3PHB70G08B
S3PHB70G12B
S3PHB70G14B
S3PHB70G16B
Type
VRSM
V
S3PHBD70G08% S3PFB70G08B 900
S3PHBD70G12% S3PFB70G12B 1300
S3PHBD70G14% S3PFB70G14B 1500
S3PHBD70G16% S3PFB70G16B 1700
VRRM
V
800
1200
1400
1600
Symbol
Test Conditions
Idav Tc=85^oC, module
Idavm module
IFRMS,ITRMS per leg
IFSM,ITSM
TVJ=45^oC
VR=0
TVJ=TVJM
VR=0
TVJ=45^oC
I²t
VR=0
TVJ=TVJM
VR=0
(di/dt)cr
TVJ=125^oC
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.3A
diG/dt=0.3A/us
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
repetitive, IT=50A
. _{non repetitive, IT=1/2 Idav}
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=500us
tp = 10ms
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
Md
Mounting torque (M5)
(10-32 UNF)
Weight typical
Maximum Ratings
70
70
36
550
600
500
550
1520
1520
1250
1250
150
500
1000
10
5
1
-40...+125
125
-40...+125
2500
3000
5 ± 15 %
44 ± 15 %
95
Unit
A
A
A²s
A/us
V/us
W
o_C
V~
Nm/lb.in.
g
P1
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