S3PHB180 Datasheet, PDF (1/3 Pages) Sirectifier Semiconductors – Three Phase Half Controlled Bridge Modules/Full Controlled Bridge

S3PHB180, S3PHBD180, S3PFB180
Three Phase Half Controlled Bridge Modules/Full Controlled Bridge
CDE
~~~
CDE
~~~
Dimensions in mm (1mm=0.0394")
M6x10
CDE
~~~
-
+
S3PHB180
-
+
S3PHBD180
-
+
S3PFB180
Type
VRSM
V
S3PHB180G08B S3PHBD180G08B S3PFB180G08B 900
S3PHB180G12B S3PHBD180G12B S3PFB180G12B 1300
S3PHB180G16B S3PHBD180G16B S3PFB180G16B 1700
S3PHB180G18B S3PHBD180G18B S3PFB180G18B 1900
VRRM
V
800
1200
1600
1800
Symbol
Test Conditions
Idav Tc=85^oC, module
Idavm module
IFRMS,ITRMS per leg
IFSM,ITSM
TVJ=45^oC
VR=0
TVJ=TVJM
VR=0
TVJ=45^oC
I²t
VR=0
TVJ=TVJM
VR=0
(di/dt) cr
TVJ=125^oC
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.3A
diG/dt=0.3A/us
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
repetitive, IT=50A
. _{non repetitive, IT=1/2 Idav}
(dv/dt) cr
PGM
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
TVJ=TVJM
IT=ITAVM
tp=30us
tp=500us
tp = 10ms
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
Md
Mounting torque (M6)
(10-32 UNF)
Weight typical
94
80
72
26
26
2.8 x 0.8
M6
C~
D~
A+
3
2
1
B-
E~
4
5
6
12
7
25
66
Maximum Ratings
Unit
180
180
A
89
1500
1600
1350
A
1450
11200
10750
9100
A²s
8830
150
A/us
500
1000
10
5
1
-40...+125
125
-40...+125
2500
3000
5 ± 15 %
44 ± 15 %
305
V/us
W
o_C
V~
Nm/lb.in.
g
P1
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