S3PDB42N08PAV Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Three Phase Bridge Rectifiers

S3PDB42N**PAV
Three Phase Bridge Rectifiers
AVALANCHE DIODE INSIDE
Dimensions(mm)
VRMS
V
S3PDB42N08PAV
S3PDB42N12PAV
S3PDB42N14PAV
S3PDB42N16PAV
S3PDB42N18PAV
900
1300
1500
1700
1900
VRRM
V
800
1200
1400
1600
1800
o
_ __
[mm]
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
MIN
TYP
34. 70 35. 0
MAX
35. 30
24. 70 25. 0 25. 30
17. 0 17. 50 18. 0
4. 70 4. 80 4. 90
12. 45 12. 65 12. 85
2. 30 2. 50 2. 70
3. 10 3. 25 3. 40
3. 40 3. 60 3. 80
4. 40 4. 60 4. 80
2. 50 2. 70 2. 90
0. 60 0. 70 0. 80
2. 00 2. 20 2. 40
0. 90 1. 0
1. 10
2. 50 2. 60 2. 90
7. 30 7. 50 7. 70
5. 40 5. 50 5. 60
( 3. 0) × 45°
Ø3. 10 Ø3. 25 Ø 3.40
1. 40 1. 50 1. 60
4. 60 4. 80 5. 0
1. 20 1. 30 1. 40
Symbol
Test Conditions
I(AV)
I FSM
Maximum Average Forward(With Heatsink )
Rectified Current @TC=100^OC(Without Heatsink)
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
P_RSM
VF
IR
I²t
VISO
R_thJC
TJ
Tstg
Md
Per diode chip, T_VJ = 25°C, t_p = 10 ms
O
IF=42.0A;TVJ=25 C
Maximum DC Reverse Current
At Rated DC Blocking Voltage
I ² t Rating For Fusing(t 8.3ms)
RMS 1min
Per module
Operating Temperature Range
Storage Temperature Range
Mounting Torque (M3)
@TJ=25 ^OC
@TJ=125 ^OC
Characteristic Values
42.0
6.0
390
6.0
1.20
10
200
720
2500
0.70
-40...+180
-40...+180
0.5~0.8
Unit
A
A
KW
V
A
A² S
VAC
°C/W
o_C
o_C
Nm
FEATURES
* Rating to 1800V PRV
* Ideal for printed circuit board
* Low forward voltage drop, high current capability
* Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
* UL File E310749
* RoHS Compliant
* Avalanche Diode dies inside
MECHANICAL DATA
* Polarity:Symbols molded on body
* Weight:0.23 ounces,6.6 grams
* Mounting position:Any
Page1
www.sirectifier.com
©2008 SIRECTIFIER All rights reserved,
Tel: [phone] Fax: [phone] E-mail: [e-mail]