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S1PDB35005 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Single Phase Bridge Rectifiers Modules
S1PDB35005 thru S1PDB3518
Single Phase Bridge Rectifiers Modules
Dimensions
S1PDB35005
S1PDB3501
S1PDB3502
S1PDB3504
S1PDB3506
S1PDB3508
S1PDB3510
S1PDB3512
S1PDB3514
S1PDB3516
S1PDB3518
VRRM
V
50
100
200
400
600
800
1000
1200
1400
1600
1800
VRMS
V
35
70
140
280
420
560
700
840
980
1120
1260
VDC
V
50
100
200
400
600
800
1000
1200
1400
1600
1800
Symbol
Characteristics
Maximum Ratings
I(AV)
Maximum Average Forward
Rectified Current @TC=50oC (With Heatsink)
35.0
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
400
VF Maximum Forward Voltage At 17.5A DC
1.1
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
5.0
@TJ=125oC
500
I2t I2t Rating For Fusing (t < 8.3 ms), (Note 1)
660
CJ Typical Junction Capacitance Per Element (Note 2)
150
ROJC Typical Thermal Resistance (Note 3)
1.2
TJ Operating Temperature Range
-55 to +150
TSTG Storage Temperature Range
-55 to +150
NOTES: 1. Measured At Non-repetitive, For Greater Than 1ms And Less Than 8.3ms.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Device Mounted On 300mm x 300mm x 1.6mm Cu Plate Heatsink.
Unit
A
A
V
uA
A2S
pF
oC/W
oC
oC
FEATURES
* Rating to 1000V PRV
* High efficiency
* Glass passivated chip junction
* Electrically isolated metal case for maximum heat
dissipation
* UL file NO.310749
* RoHS compliant
MECHANICAL DATA
* Case: Molded plastic with Heatsink internally
mounted in the bridge encapsulation
* Polarity: As marked on Body
* Mounting: Hole for # 10 screw
* Weight: 18 grams
P1
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